International Rectifier IRF7306PBF In-Stock

International Rectifier   IRF7306PBF  In-Stock

IRF7306PBF

#IRF7306PBF International Rectifier IRF7306PBF New IRF7306PBF Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8; IRF7306PBF , IRF7306PBF pictures, IRF7306PBF price, #IRF7306PBF supplier
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Manufacturer Part Number: IRF7306PBF
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 7.25
Additional Feature: LOGIC LEVEL COMPATIBLE
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (Abs) (ID): 3 A
Drain Current-Max (ID): 3.6 A
Drain-source On Resistance-Max: 0.1 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: MS-012AA
JESD-30 Code: R-PDSO-G8
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: P-CHANNEL
Power Dissipation-Max (Abs): 1.4 W
Pulsed Drain Current-Max (IDM): 14 A
Qualification Status: Not Qualified
Subcategory: Other Transistors
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

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